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LucidaTM GS200 ALD
Atomic layer deposition system for surface passivation of c-Si solar cells
LucidaTM GS200 ALD
Applications
- Surface passivation of c-silicon solar cells
- Applications of R&D
- High throughput
: > 500 wafers/hour of 156 x 156㎟ size with 10nm thickness
Features
- Al2O3 thin films with good thickness uniformity
- Advanced process kit and small volume chamber for short gas cycle times
- Extremely materialize ALD mechanism
- Small foot print
- Totally integrated process module
- Easy process control
- Minimize gas supply line length
- Cassette to cassette operation
Technical Specifications
| Substrate Size | 156 x 156㎟ |
|---|---|
| Substrate Temperature | 25℃ ~ 250 ℃ |
| Precursor Sources | TMA,a H2O (O3 optional) |
| Deposition Uniformity | <±2% |
| Footprint | 2375 x 950 mm |
| Compatibility | Clean room class 10000 |
| Control System | PLC control with PC user interface (full auto) |
| Optional | O3 generator |