Global Leader in ALD Technology

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  • Lucida™ D series ALD

LucidaTM D series ALD

Atomic layer deposition system for R&D applications

LucidaTM D series ALD

Lucida GS Series


  • Thin film process for ALD research
    : Al2O3, HfO2, ZrO2, TiO2, ZnO ……
  • 100~200mm wafers
  • Applications of R&D
  • Very low price


  • ALD ultra-thin high-k dielectric with good thickness uniformity and 100% conformal step coverage
  • Advanced process kit and small-volume chamber for short cycle times
  • Extremely materialize ALD mechanism (traveling wave method)
  • Small foot print
  • Totally integrated process module
  • Easy process control
  • Minimized gas supply line length

Technical Specifications

Technical Specifications
Substrate Size 100~200 mm
Substrate Temperature 25℃ ~ 350 ℃ (± 0.2 ℃) @ 1Torr, in wafer
Precursor Sources 3, heated 2 sources and H2 O source
Deposition Uniformity 2%
Footprint 950 x 700 mm
Compatibility Clean room class 100
Control System PC control base (full auto)
Optional Up to 4 heated sources
Optional Lucida cooler (2ch)
More information for application and specification for Lucida™ D series