| Metal-organic chemical vapor deposition system for R&D applications |
| Applications |
- Oxide, metal, metal nitride......
- 100~300mm wafers
- Applications of R&D
- Very low price
- Various additional option
|
| Features |
- MOCVD thin oxide, metal and metal nitride with good
thickness uniformity
- Advanced process kit and small-volume chamber
- Direct plasma system(optional)
- Small foot print
- Totally integrated process module
- Easy process control
- Minimize gas supply line length
- Load-lock system
|
| Technical specifications |
| Substrate size |
150~300 mm |
| Heater temperature |
25℃ ~ 450 ℃ (± 0.2 ℃) @ 1Torr, in wafer |
| Precursor sources |
3, heated 2 sources |
| Footprint |
2600(L) x 650(W) x 1500(H) mm(include MTB) |
| Deposition mechanism |
Dual shower-head type |
| Compatibility |
Clean room class 100 |
| Control system |
PLC/PC control base (full auto) |
| Optional |
Up to 4 heated sources |
| Optional |
Lucida cooler(2ch) |
| Optional |
Load-lock system |
| Optional |
Direct plasma system |
|
PRODUCTS
