PRODUCTSR&DLucida™ P series PECVD
Lucida™ P series PECVD
Plasma-enhanced chemical vapor deposition system for
R&D applications
Applications
  • a-Si, Si3N4 and SiO2 ……
  • 100~300mm wafers
  • Applications of R&D
  • Very low price
  • Various additional option (In situ cleaning)
Features
  • PECVD thin a-Si, Si3N4 and SiO2 with good thickness
    uniformity
  • Advanced process kit and small-volume chamber
  • Direct plasma system
  • Small foot print
  • Totally integrated process module
  • Easy process control
  • Load-lock system
Technical specifications
Substrate size 150~300 mm
Heater temperature 25℃ ~ 450 ℃ (± 0.2 ℃) @ 1Torr, in wafer
Precursor sources 3, heated 2 sources
Footprint 2600(L) x 650(W) x 1500(H) mm(include MTB)
Compatibility Clean room class 100
Control system PLC/PC control base (full auto)
More information for application and specification for Lucida™ P series