Plasma-enhanced chemical vapor deposition system for
R&D applications |
Applications |
- a-Si, Si3N4 and SiO2 ……
- 100~300mm wafers
- Applications of R&D
- Very low price
- Various additional option (In situ cleaning)
|
Features |
- PECVD thin a-Si, Si3N4 and SiO2 with good thickness
uniformity
- Advanced process kit and small-volume chamber
- Direct plasma system
- Small foot print
- Totally integrated process module
- Easy process control
- Load-lock system
|
Technical specifications |
Substrate size |
150~300 mm |
Heater temperature |
25℃ ~ 450 ℃ (± 0.2 ℃) @ 1Torr, in wafer |
Precursor sources |
3, heated 2 sources |
Footprint |
2600(L) x 650(W) x 1500(H) mm(include MTB) |
Compatibility |
Clean room class 100 |
Control system |
PLC/PC control base (full auto) |
|