Lucida™ GS200 ALD
Atomic layer deposition system for surface passivation of
c-Si solar cells
  • Surface passivation of c-silicon solar cells
  • Applications of R&D
  • High throughput
    : > 500 wafers/hour of 156 x 156㎟ size with 10nm thickness
  • Al2O3 thin films with good thickness uniformity
  • Advanced process kit and small volume chamber for short gas cycle times
  • Extremely materialize ALD mechanism
  • Small foot print
  • Totally integrated process module
  • Easy process control
  • Minimize gas supply line length
  • Cassette to cassette operation
Technical specifications
Substrate size 156 x 156㎟
Substrate temperature 25℃ ~ 250 ℃
Precursor sources TMA, H2O( O3 optional)
Deposition uniformity <±2%
Footprint 2375 x 950 mm
Compatibility Clean room class 10000
Control system PLC control with PC user interface
(full auto)
Optional O3 generator
More information for application and specification for Lucida™ GS200 ALD