PRODUCTSR&DLucida™ D series ALD
Lucida™ D series ALD
Atomic layer deposition system for R&D applications
  • Thin film process for ALD research
    : Al2O3, HfO2, ZrO2, TiO2, ZnO ……
  • 100~200mm wafers
  • Applications of R&D
  • Very low price
  • ALD ultra-thin high-k dielectric with good thickness
    uniformity and 100% conformal step coverage
  • Advanced process kit and small-volume chamber for short cycle times
  • Extremely materialize ALD mechanism
    (traveling wave method)
  • Small foot print
  • Totally integrated process module
  • Easy process control
  • Minimize gas supply line length
Technical specifications
Substrate size 100~200 mm
Substrate temperature 25℃ ~ 350 ℃ (± 0.2 ℃) @ 1Torr, in wafer
Precursor sources 3, heated 2 sources and H2O source
Deposition uniformity <±2%
Footprint 950 x 700 mm
Compatibility Clean room class 100
Control system PC control base (full auto)
Optional Up to 4 heated sources
Optional Lucida cooler(2ch)
More information for application and specification for Lucida™ D series