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Technology Reports

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35 Chandreswar Mahata and Sungjun Kim, Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode, Ceramics International 47 (2021) 1199–1207
34 Seungyeol Oh, Hyungwoo Kim, Alireza Kashir, and Hyunsang Hwang, Efffect of dead layers on the ferroelectiric property of ultrathin HfZrOx film, Appl. Phys. Lett. 117, 252906 (2020); doi 10.10635.0030856
33 Hyeong-Rae Kim, Ji-Hee Yang, Gi-Heon Kim, and Sung-Min Yoon, Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate, J. Vac. Sci. Technol. B 37(1), Jan/Feb 2019
32 Soumyadeep Sinha et al, Atomic layer deposited-ZnO@ 3D-Ni-foam composite for Na-ion battery anode: A novel route for easy and efficient electrode preparation, Ceramics International 45 (2019) 1084-1092
31 Min-Woo Kim et al., Electrosprayed BiVO4 nanopillars coated with atomic-layer-deposited ZnO/TiO2 as highly efficient photoanodes for solar water splitting, Chemical Engineering Journal 333 (2018) 721–729
30 Li Qiang Zhu; Xiang Li; Zhong Hui Yan; Hong Liang Zhang; Qing Wan, Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Depositioned Al2O3 Films, IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 12, DECEMBER 2012
29 Li Qiang Zhu∗, Yang Hui Liu, Hong Liang Zhang, Hui Xiao, Li Qiang Guo, Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications, Applied Surface Science 288 (2014) 430–434
28 Seok Hwan Jeong, Na Liu, Heekyeong Park, Young Ki Hong and Sunkook Kim, Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors, Appl. Sci. 2018, 8, 424
27 YOON-JONG MOON et al., Microstructured void gratings for outcoupling deep-trap guided modes, OPTICS EXPRESS A450 Vol. 26, No. 10, 14 May 2018
26 Yue Wang, Kyung-Mun Kang, Minjae Kim, and Hyung-Ho Park, Oxygen vacancy-passivated ZnO thin film formed by atomic layer deposition using H2O2, Journal of Vacuum Science & Technology A 36, 031504 (2018)