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LucidaTM P series PECVD

Plasma-enhanced chemical vapor deposition system for R&D applications

LucidaTM P series PECVD

Lucida GS Series

Application

  • a-Si, Si3N4 and SiO2 ……
  • 100~300mm wafers
  • Applications of R&D
  • Very low price
  • Various additional option (In situ cleaning)

Features

  • PECVD thin a-Si, Si3N4 and SiO2 with good thickness uniformity
  • Advanced process kit and small-volume chamber
  • Direct plasma system
  • Small foot print
  • Totally integrated process module
  • Easy process control
  • Load-lock system

Technical Specifications

Technical Specifications
Substrate Size 150~300 mm
Heater Temperature 25℃ ~ 450 ℃ (± 0.2 ℃) @ 1Torr, in wafer
Precursor Sources 3, heated 2 sources
Footprint 2600(L) x 650(W) x 1500(H) mm(include MTB)
Compatibility Clean room class 100
Control System PLC/PC control base (full auto)