Global Leader in ALD Technology

  • 메인
  • TECHNOLOGIES
  • Technology Reports

Technology Reports

게시판
No File SIZE
15 Kyung-Mun Kang, Yong-June Choi, Geun Young Yeom, and Hyung-Ho Park, Thickness-dependent growth orientation of F-doped ZnO films formed by atomic layer deposition, Journal of Vacuum Science & Technology A 34, 01A144 (2016)
14 Sung-Gyu Park et al., Fabrication of Au-Decorated 3D ZnO Nanostructures as Recyclable SERS Substrates, SENSORS, 2014 IEEE, 2-5 Nov. 2014, 1930-0395
13 J. Park et al., The growth behavior and properties of atomic layer deposited zinc oxide films using hydrogen peroxide (H2O2) and ozone (O3) oxidants, Ceramics International Volume 41, Issue 1, Part B, January 2015, Pages 1839-1845
12 Kwang-Dae Kim et al., Enhanced Stability of Organic Photovoltaics by Additional ZnO Layers on Rippled ZnO Electron-collecting Layer using Atomic Layer Deposition, Bull. Korean Chem. Soc. 2014, Vol. 35, No. 2 353
11 Yanghui Liu, Liqiang Zhu, Liqiang Guo, Hongliang Zhang, Hui Xiao, Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates, J. Mater. Sci. Technol., 2014, 30(8), 835-838
10 Do-Joong Lee et al., Ultrasmooth, High Electron Mobility Amorphous In−Zn−O Films Grown by Atomic Layer Deposition, J. Phys. Chem. C 2014, 118, 408−415
9 Tae-Hoon Jung et al., Controlled growth and properties of p-type cuprous oxide films byplasma-enhanced atomic layer deposition at low temperature, Applied Surface Science 285P (2013) 373–379
8 J. Vac. Sci. Technol. A 31(1), JanFeb 2013, Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
7 Sun-Young Park et al., Organic photovoltaics with high stability sustained for 100 days without encapsulation fabricated using atomic layer deposition, Phys. Status Solidi RRL 6, No. 5, 196–198 (2012)
6 Young-Joo Lee et al., Efficient Hydrogenated Amorphous Silicon Thin-Film Solar Cells Using Zinc Oxide Deposited by Atomic Layer Deposition as a Protective Interfacial Layer, J. Phys. Chem. C 2012, 116, 23231−23235